The most merciful thing in the world, I think, is the inability of the human mind to correlate all its contents. We live on a placid island of ignorance in the midst of black seas of infinity, and it was not meant that we should voyage far. The sciences, each straining in its own direction, have hitherto harmed us little; but some day the piecing together of dissociated knowledge will open up such terrifying vistas of reality, and of our frightful position therein, that we shall either go mad from the revelation or flee from the deadly light into the peace and safety of a new dark age.
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在传统存储产品方面，10nm以下DRAM制造工艺正成为主流，并逐步向7nm工艺突破，通过“FinFET架构+TSV技术”提升密度、降低功耗。3D NAND堆叠层数突破400层后，“垂直堆叠”难度加剧，厂商转向“水平扩展+架构优化”，比如三星V-NAND的阶梯式架构、Kioxia的BiCS架构，同时引入“HKC（高K介质+金属栅）”技术，解决高层数堆叠的漏电、散热问题，制造工艺从“层数竞赛”转向“架构+工艺”双重竞争。